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Fujitsu Launches 12Mbit Resistive Random Access Memory MB85AS12MT


Fujitsu Semiconductor Memory Solutions Co., Ltd. launched 12Mbit ReRAM (Resistive Random Access Memory) MB85AS12MT, which is the densest product in Fujitsu ReRAM product series.

ReRAM resistive random access memory is a nonvolatile memory in which a pulse voltage is applied to a thin metal oxide film, resulting in a huge change in the resistance of recording 1 and 0. The metal oxide structure is used between the electrodes, and the manufacturing process is very simple. At the same time, it still has the advantages of low power consumption, fast writing speed and so on.

MB85AS12MT This new product is a nonvolatile memory with a large storage density of 12Mbit and a package size of about 2mm x 3mm. It has a very low reading current of 0.15 mA on average during the reading operation. This product has the characteristics of small package size and small reading current, and is very suitable for hearing aids, smart watches and other wearable devices.

MB85AS12MT is a nonvolatile memory with 12Mbit storage density, which can operate in a wide power supply voltage range of 1.6V to 3.6V. The memory density of the new ReRAM product is 1.5 times that of the existing 8Mbit ReRAM, while maintaining the same package size WL-CSP (wafer level chip size package) and the same pin allocation. The product can store character data of about 90 pages of newspapers in a small package size of about 2mm x 3mm.

The WL-CSP used by MB85AS12MT can save about 80% of the installation surface area compared with the 8-pin SOP often used for storage devices with serial peripheral interface (SPI).

Compared with other nonvolatile memories, the new ReRAM product has a very small reading current level. At 5MHz operating frequency, the average reading current is as small as 0.15mA, and even at 10MHz, the maximum reading current is 1.0mA. Therefore, by installing the MB85AS12MT in a battery powered device with frequent data reading operations (such as specific program reading or setting data reading), battery consumption can be minimized. It is ideal for small, battery powered wearable devices such as hearing aids and smart watches.

Fujitsu Semiconductor Memory Solution has been developing new non-volatile memory to meet the requirements of frequently reading data while continuing to seek higher density FeRAM products for customer equipment that need frequent data rewriting, thus introducing this new 12Mbit ReRAM product. Fujitsu Semiconductor memory solutions continuously develop various low-power memory products to meet customer needs.

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