MB85RC16PNF-G-JNERE1 Overview
Memory FeRAM 16 K (2 K × 8) Bit I2C MB85RC16PNF-G-JNERE1
■ PRODUCT DESCRIPTION
The MB85RC16PNF-G-JNERE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, adopting the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.
Different from SRAM, the MB85RC16 can keep data without needing a data backup battery.
The memory cell used in the MB85RC16 has at least 1 trillion Read/Write operation cycles per byte, which is a great improvement over the number of read/write operations than by other nonvolatile memory products.
The MB85RC16 can provide writing in one byte units since the long writing time is not needed unlike Flash memory and EEPROM. Therefore, the writing completion waiting sequence like a write busy state is not needed.
■ FEATURES
- Bit configuration: 2,048 words × 8 bits
- Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
- Operating frequency: 1 MHz (Max)
- Read/Write cycles : 1 trillion times/byte
- Data maintenance period: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
- Operating power supply voltage : 2.7 V to 3.6 V
- Low power consumption : Operating power supply current 70 μA (Typ @1 MHz)
Standby current 0.1 μA (Typ)
- Operation surrounding temperature scope : − 40 °C to + 85 °C
- Package: 8-pin plastic SOP (FPT-8P-M02)
8-pin plastic SON (LCC-8P-M04)
RoHS compliance
Application
The FeRAM has a wide range of application, such as industrial controllers, industrial instruments, ADAS, Drones, Meters, Robots, Automotives, BMS, TMPS, E-tags, Monitoring, Electronic Labes, Medical, Tracking, Servo Motors, Power monitoring, Circuit Breakers, Chiller, numercial control machine, power distribution cabinet, T-box, EV chargers, medical display equipment, unltrasonic intruments, diagnostic devices, medical products managements, electronic labels, charing pile, E-mobility, and so on.

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