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FeRAM Memory IC 256K Bit MB85RC256VPNF-G-JNERE1

The MB85RC256VPNF-G-JNERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

SKU MB85RC256VPNF-G-JNERE1 Category Tag

Overview

Memory FeRAM 256 K (32 K x 8) Bit I2C MB85RC256VPNF-G-JNERE1

■ DESCRIPTION

The MB85RC256VPNF-G-JNERE1 is an FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.

Different from SRAM, the MB85RC256VPNF-G-JNERE1 can keep and maintain data without needing a data backup battery.

The read/write endurance of the nonvolatile memory cells used for the MB85RC256V has improved to be at least 1 trillion cycles, obviously outperforming other nonvolatile memory products in the number.

The MB85RC256VPNF-G-JNERE1 does not need a polling sequence after writing to the memory such as the case of Flash memory or EEPROM.

■ FEATURES

  • Bit configuration : 32,768 words x 8 bits
  • Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
  • Operating frequency : 1 MHz (Max)
  • Read/write endurance : 1012 times / byte
  • Data retention : 10 years ( +85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)
  • Operating power supply voltage: 2.7 V to 5.5 V
  • Low-power consumption : Operating power supply current 200 uA (Max @1 MHz)

Standby current 27 uA (Typ)

  • Operation ambient temperature range: – 40 ℃ to + 85 ℃
  • Package : 8-pin plastic SOP (150mil)

8-pin plastic SOP (208mil)

Both are RoHS compliant

MB85RC256VPNF-G-JNERE1
MB85RC256VPNF-G-JNERE1

Additional information

Density

256K Bit

Power Supply Voltage

2.7 to 5.5V

Operating Freq. (max)

1MHz

Operating Temp.

-40 to +85℃

Read/Write Cycle

1012(1 trillion) times

Package

SOP-8

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