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ReRAM

Memory ReRAM IC Fujitsu 12M Bit MB85AS12MTPW-GAERE1

MB85AS12MTPW-GAERE1 is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,572,864 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

SKU MB85AS12MTPW-GAERE1 Category Tag

Overview

12M (1536 K x 8) Bit SPI MB85AS12MT

DESCRIPTION

The Fujitsu ReRAM MB85AS12MTPW-GAERE1 is a non-volatile memory device that uses resistive switching technology for data storage. It has a storage capacity of 12M bits and an SPI interface for communication with other electronic devices. The device offers high-speed read and write operations, low power consumption, and high endurance. It can operate in a wide temperature range of -40°C to 85°C, making it suitable for use in harsh environments.

The Fujitsu ReRAM is known for its high-speed read and write operations, low power consumption, high endurance, and wide temperature range.

The device is particularly well-suited for use in IoT devices, smart meters, and automotive systems, where high performance and reliability are essential. Its low power consumption and high endurance make it ideal for use in battery-powered devices that require long-term data storage.

Overall, the Fujitsu ReRAM MB85AS12MTPW-GAERE1 is an excellent choice for anyone looking for a high-performance, reliable non-volatile memory solution.

FEATURES

  • Bit configuration: 8 Mbits (1,572,864 words x 8 bits)
  • Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

  • Write buffer size: 256 bytes
  • Operating frequency: 10 MHz (Max)
  • Data endurance: 5 x 105 times / 4bytes*

*4 bytes are selected by A1 to A0.

  • Data retention: 10 years (+85 C)
  • Operating power supply voltage : 1.6 V to 3.6 V
  • Operating power supply current : Write current 1.5 mA (Typ)

Read current 0.15 mA (Typ@5 MHz)

Standby current 65 uA (Typ)

Sleep current 6 uA (Typ)

  • Operation ambient temperature range : -40 ℃ to +85 ℃
  • Package: 11-pin WLP

RoHS compliant

Additional information

Memory Density

12M

Power Supply Voltage

1.6 to 3.6V

Operating Freq.

10MHz

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