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Memory ReRAM 8M SPI MB85AS8MTPW-G-KBAERE1

MB85AS8MTPW-G-KBAERE1 is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

SKU MB85AS8MTPW-G-KBAERE1 Category Tag

Overview

8M (1024 K x 8) Bit SPI MB85AS8MT DESCRIPTION

MB85AS8MTPW-G-KBAERE1 is a ReRAM (Resistive Random Access Memory) chip in a configuration of 1,048,576 words x 8 bits, using the resistance-variable memory process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85AS8MTPW-G-KBAERE1 adopts the Serial Peripheral Interface (SPI).

MB85AS8MTPW-G-KBAERE1 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85AS8MT can be used for 1 x 106 rewrite operations.

FEATURES

  • Bit configuration: 8 Mbits (1,048,576 words x 8 bits)
  • Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

  • Write buffer size: 256 bytes
  • Operating frequency: 10 MHz (Max)
  • Data endurance: 1 x 106 times / 4bytes*

*4 bytes are selected by A1 to A0.

  • Data retention: 10 years (+85 ℃)
  • Operating power supply voltage : 1.6 V to 3.6 V
  • Operating power supply current : Write current 1.5 mA (Typ)

Read current 0.15 mA (Typ@5 MHz)

Standby current 60 uA (Typ)

Sleep current 6 uA (Typ)

  • Operation ambient temperature range : -40 ℃ to +85 ℃
  • Package: 11-pin WLP

RoHS compliant

Additional information

Memory Density

8M

Power Supply Voltage

1.6 to 3.6V

Operating Freq.

10MHz

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