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FeRAM

FeRAM Memory IC 4M Bit MB85R4M2TFN-G-JAE2 Parallel FRAM

The MB85R4M2TFN-G-JAE2 is a FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

 

SKU MB85R4M2TFN-G-JAE2 Category Tag

■ DESCRIPTION

The MB85R4M2TFN-G-JAE2 is a FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words× 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies.

The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4M2T uses a pseudo-SRAM interface.

■ FEATURES

  • Bit configuration: 262,144 words × 16 bits
  • LB and UB data byte control: Available Configuration of 524,288 words × 8 bits
  • Read/write endurance: 1013 times / 16 bits
  • Data retention: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
  • Operating power supply voltage: 1.8 V to 3.6 V
  • Low power operation: Operating power supply current 20 mA (Max)

Standby current 150 μA (Max)

Sleep current 20 μA (Max)

  1. Operation ambient temperature range : − 40 °C to + 85 °C
  2. Package: 44-pin plastic TSOP (FPT-44P-M35)

Related Product: MB85S2MTY

 

 

 

Additional information

Density

2M Bit

Interface

SPI

Power Supply Voltage

1.8 to 3.6V

Operating Freq. (max)

50MHz(MX)

Read/Write Cycle

1013(10 trillion) times

Operating Temp.

-40 to +125℃

Package

SOP-8

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