FeRAM

MB85RC16PNF-G-JNERE1 Overview

Memory FeRAM 16 K (2 K × 8) Bit I2C MB85RC16PNF-G-JNERE1

■ PRODUCT DESCRIPTION

The MB85RC16PNF-G-JNERE1 is a non-volatile ferroelectric random access memory (FeRAM) chip manufactured by Fujitsu. FeRAM is a type of memory that combines the advantages of both dynamic random access memory (DRAM) and flash memory. It is capable of fast read/write operations, has low power consumption, and is resistant to radiation and extreme temperatures.

The MB85RC16PNF-G-JNERE1 has a storage capacity of 16 kilobytes and operates on a single power supply voltage of 2.7V to 3.6V. It has a high-speed data transfer rate of up to 40 MHz and supports both SPI and I2C interfaces. The chip is housed in an 8-pin plastic SOP (Small Outline Package) and operates over the industrial temperature range of -40°C to +85°C.

Different from SRAM, the MB85RC16 can keep data without needing a data backup battery.

The memory cell used in the MB85RC16 has at least 1 trillion Read/Write operation cycles per byte, which is a great improvement over the number of read/write operations than by other nonvolatile memory products.

The MB85RC16 can provide writing in one byte units since the long writing time is not needed unlike Flash memory and EEPROM. Therefore, the writing completion waiting sequence like a write busy state is not needed.

■ FEATURES

• Bit configuration: 2,048 words × 8 bits

• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency: 1 MHz (Max)

• Read/Write cycles : 1 trillion times/byte
• Data maintenance period: 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)

• Operating power supply voltage : 2.7 V to 3.6 V
• Low power consumption : Operating power supply current 70 μA (Typ @1 MHz)

Standby current 0.1 μA (Typ)

• Operation surrounding temperature scope : − 40 °C to + 85 °C
• Package: 8-pin plastic SOP (FPT-8P-M02)

8-pin plastic SON (LCC-8P-M04)

RoHS compliance

Application

The MB85RC16PNF-G-JNERE1 is commonly used in a variety of applications, including automotive, industrial control systems, and smart meters, where non-volatile memory with high endurance and low power consumption is required.