FeRAM

MB85RC256TYPNF-G-BCERE1 DESCRIPTION

The Fujitsu FeRAM MB85RC256TY is a specific type of non-volatile memory device manufactured by Fujitsu. FeRAM stands for Ferroelectric Random Access Memory, which is a type of memory technology that combines the benefits of both non-volatile and random access memory.

The MB85RC256TY is a specific model within the FeRAM product line. It has a storage capacity of 256 kilobits (32 kilobytes) and operates at a voltage range of 1.8 to 3.6 volts. The device offers high-speed read and write operations, low power consumption, and excellent durability, making it suitable for a wide range of applications.

FeRAM technology differs from traditional memory technologies such as Flash or DRAM. It utilizes a ferroelectric material as the storage medium, which can retain data even when power is removed. This characteristic enables FeRAM to offer fast read and write speeds, high endurance, and low power consumption compared to other memory technologies.

The MB85RC256TY FeRAM device is commonly used in applications where data reliability, fast access times, and power efficiency are critical. Some examples include industrial automation, automotive systems, smart meters, and various Internet of Things (IoT) devices.

Please note that the information provided is based on general knowledge up until September 2021, and there may have been updates or new developments regarding the Fujitsu FeRAM MB85RC256TY since then.

MB85RC256TYPNF-G-BCERE1 FEATURES

• Bit configuration : 32,768 words x 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
• Read/write endurance : 1013 times / byte
• Data retention : 50.4 years ( + 85 ℃),
• 13.7 years ( + 105 ℃),
• 4.2 years ( + 125 ℃),
• Operating power supply voltage: 1.8 V to 3.6 V
• Low-power consumption : Operating power supply current 0.27 mA (Typ @3.4 MHz)
0.4 mA (Max @3.4 MHz)
Standby current 58 uA (Typ)
Sleep current 3.1 uA (Typ)
• Operation ambient temperature range: – 40 ℃  to + 125 ℃
• Package : 8-pin plastic SOP (150mil)  Embossed carrier tape
RoHS compliant

FeRAM ACKNOWLEDGE — POLLING NOT REQUIRED

The MB85RC256TYPNF-G-BCERE1 performs the high speed write operations, so any waiting time for an ACK polling* does not occur.

*: In E2PROM, the Acknowledge Polling is performed as a progress check whether rewriting is executed or not. It is normal to judge by the 9th bit of Acknowledge whether rewriting is performed or not after inputting the start condition and then the device address word (8 bits) during rewriting

WRITE PROTECT (WP)

The entire memory array can be write protected using the Write Protect pin. When the Write Protect pin is set to the “H” level, the entire memory array will be write protected. When the Write Protect pin is the “L” level, the entire memory array will be rewritten. Reading is allowed regardless of the WP pin’s “H” level or “L” level.

Application

MB85RC256TYPNF-G-BCERE1 is designed specially for automotives.