FeRAM

MB85RC256TYPNF-GS-BCE1 DESCRIPTION

The MB85RC256TY is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

Different from SRAM, the MB85RC256TY can retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC256TY has improved to be at least 1013 cycles, significantly outperforming other nonvolatile memory products in the number.

The MB85RC256TY does not need a polling sequence after writing to the memory such as the case of Flash memory or E2PROM.

MB85RC256TYPNF-GS-BCE1 FEATURES

• Bit configuration : 32,768 words x 8 bits
• Two-wire serial interface : Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
• Operating frequency : 3.4 MHz (Max @HIGH SPEED MODE)
1 MHz (Max @FAST MODE PLUS)
• Read/write endurance : 1013 times / byte
• Data retention : 50.4 years ( + 85 ℃),
• 13.7 years ( + 105 ℃),
• 4.2 years ( + 125 ℃),
• Operating power supply voltage: 1.8 V to 3.6 V
• Low-power consumption : Operating power supply current 0.27 mA (Typ @3.4 MHz)
0.4 mA (Max @3.4 MHz)
Standby current 58 uA (Typ)
Sleep current 3.1 uA (Typ)
• Operation ambient temperature range: – 40 ℃  to + 125 ℃
• Package : 8-pin plastic SOP (150mil)
• 8-pin plastic SON (5mmd x 6mm)
RoHS compliant