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FeRAM

SPI FRAM MB85RS128BPNF-G-JNERE1 FeRAM Memory 128K (16 K x 8) Bit

MB85RS128BPNF-G-JNERE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

SKU MB85RS128BPNF-G-JNERE1 Category Tag

Overview

Memory FeRAM  128K (16 K x 8) Bit SPI MB85RS128BPNF-G-JNERE1

DESCRIPTION

MB85RS128BPNF-G-JNERE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

MB85RS128BPNF-G-JNERE1 adopts the Serial Peripheral Interface (SPI).

The MB85RS128BPNF-G-JNERE1 is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.

MB85RS128B does not take long time to write data like Flash memories or E2PROM, and MB85RS128B takes no wait time.

One of the key benefits is its high read/write endurance, which means that it can withstand a large number of read/write cycles without degrading. This makes it ideal for use in applications where data is frequently read and written, such as in industrial automation systems or automotive electronics.

FeRAM also offers fast writing speeds, which can improve system performance and reduce response times. Additionally, it consumes very low power, which can help to extend battery life in portable devices. It’s also highly reliable, with a low error rate, and can operate in extreme temperatures, ranging from -40°C to +105°C. This makes it ideal for use in harsh environments where other memory technologies may not be able to function properly.

If you’re interested in learning more about FeRAM and its applications, there are several resources available online. Fujitsu’s website provides detailed information on the technology, including product specifications and application notes. Additionally, there are several technical papers and articles available on the topic, which can provide a more in-depth understanding of how FeRAM works and its advantages over other memory solutions.

FEATURES

  • Bit configuration: 16,384 words x 8 bits
  • Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

  • Operating frequency: All commands except READ 33 MHz (Max)

READ command 25 MHz (Max)

  • High endurance: 1012 times / byte
  • Data retention: 10 years ( + 85 ℃), 95 years ( + 55 ℃), over 200 years ( + 35 ℃)
  • Operating power supply voltage : 2.7 V to 3.6 V
  • Low power consumption : Operating power supply current 6 mA (Typ @33 MHz)

Standby current 9 uA (Typ)

  • Operation ambient temperature range : – 40 ℃ to + 85 ℃
  • Package: 8-pin plastic SOP (FPT-8P-M02)

RoHS compliant

Application
The FeRAM has a wide range of application, such as industrial controllers, industrial instruments, ADAS, Drones, Meters, Robots, Automotives, BMS, TPMS, E-tags, Monitoring, Electronic Labes, Tracking, Servo Motors, Circuit Breakers, Chiller, numercial control machine, power distribution cabinet, T-box, EV chargers, medical display equipment, unltrasonic intruments, diagnostic devices, medical products managements, electronic labels, charing pile, E-mobility,  converter&inverters and so on.

Fujitsu FeRAM MB85RS128BPNF-G-JNERE1
Fujitsu FeRAM MB85RS128B

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