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FeRAM Memory IC MB85RS256BPNF-G-JNERE1 256K Bit

MB85RS256BPNF-G-JNERE1 is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 Bwords × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.

SKU MB85RS256BPNF-G-JNERE1 Category Tag


Memory FeRAM 256 K (32 K x 8) Bit I2C MB85RS256BPNF-G-JNERE1


The Fujitsu FeRAM MB85RS256BPNF-G-JNERE1 is a non-volatile memory device that uses Ferroelectric Random Access Memory (FeRAM) technology. FeRAM is a type of memory that combines the high speed of Random Access Memory (RAM) with the non-volatility of Flash memory.

The MB85RS256BPNF-G-JNERE1 has a capacity of 256 kilobits (32 kilobytes) and a supply voltage range of 1.8V to 3.6V. It has a high-speed SPI interface that supports clock frequencies up to 20 MHz. The device also has a wide operating temperature range of -40°C to +85°C, making it suitable for use in harsh environments.

FeRAM technology is known for its high endurance, low power consumption, and fast write performance. The MB85RS256BPNF-G-JNERE1 has a write endurance of 10^13 cycles, which is much higher than that of traditional Flash memory. It also has a low operating current of 7 mA (max) during read and write operations and a standby current of 2 µA (max).

Overall, the Fujitsu FeRAM MB85RS256BPNF-G-JNERE1 is a reliable and efficient non-volatile memory device that is suitable for a wide range of applications, including industrial automation, automotive, and consumer electronics.


  • Bit configuration: 32,768 words × 8 bits
  • Serial Peripheral Interface : SPI (Serial Peripheral Interface)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

  • Operating frequency: All commands except READ 33 MHz (Max)

READ command                   25 MHz (Max)

  • High read/writing cycles: 1 trillion times / byte
  • Data maintenance period : 10 years ( + 85 °C), 95 years ( + 55 °C), over 200 years ( + 35 °C)
  • Operating power supply voltage : 2.7 V to 3.6 V
  • Low power consumption : Operating power supply current 6 mA (Typ@33 MHz)

Standby current 9 μA (Typ)

  • Operation surrounding temperature condition : -40 °C to +85 °C
  • Package : 8-pin plastic SOP (FPT-8P-M02)

RoHS compliance

The FeRAM has a wide range of application, such as industrial controllers, industrial instruments, ADAS, Drones, Meters, Robots, Automotives, BMS, TMPS, E-tags, Monitoring, Electronic Labes, Medical, Tracking, Servo Motors, Power monitoring, Circuit Breakers, Chiller, numercial control machine, power distribution cabinet, T-box, EV chargers, medical display equipment, unltrasonic intruments, diagnostic devices, medical products managements, electronic labels, charing pile, E-mobility,  and so on.



Additional information

Memory Density

256K Bit

Power Supply Voltage

2.7 to 3.6V

Operating Freq. (max)


Operating Temp.

-40 to +85℃

Read/Write Cycle

1013(10 trillion) times




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