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FeRAM Memory IC 2M Bit MB85RS2MTYPNF-GS-AWERE2 for Automotives

MB85RS2MTYPNF-GS-AWERE2  is a FeRAM (Ferroelectric Random Access Memory) chip in a configuration of 262,144 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. This product is specifically targeted for high-temperature environment such as automotive applications.



Memory FeRAM 2 M (256 K x 8) Bit SPI MB85RS2MTYPNF-GS-AWERE2


The MB85RS2MTYPNF-GS-AWERE2 is a high-temperature resistant Ferroelectric Random Access Memory (FeRAM) chip that is designed for use in severe environments, such as automotive applications. It has a configuration of 262,144 words x 8 bits and uses the ferroelectric process and silicon gate CMOS process technologies for forming the non-volatile memory cells.

One of the key advantages of the MB85RS2MTY is that it does not need a backup battery to retain data, different from SRAM. This makes it a more reliable and cost-effective solution for applications where battery replacement may be hard to get or impossible.

The memory cells used in the MB85RS2MTY are also highly tough, with a lifespan of up to 10 trillion read/write cycles. This is a great improvement over the number of read and write operations supported by Flash memory and EEPROM, making the MB85RS2MTY a more robust and reliable option for high-performance applications.

Another advantage of the MB85RS2MTY is its short write cycle time. Different from Flash memory and EEPROM, it does not need any waiting time during the writing process, which means that write cycle times are much faster. This makes it a more efficient option for applications that demad frequent and rapid data updates.

The MB85RS2MTY uses the Serial Peripheral Interface (SPI) for communication, which is a widely adopted interface protocol in the industry. This makes it easy to integrate into existing systems and reduces the need for additional hardware or software development.

In summary, the MB85RS2MTY is a highly sturdy and reliable nonvolatile memory solution that is well-suited for use in high-temperature and severe environments.


  • Bit configuration: 262,144 words x 8 bits
  • Special Sector Region: 256 words x 8 bits

In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed.

  • Unique ID
  • Serial Number: 64 bits

In this region, data storage after (by) three times reflow based on JEDEC MSL-3 standard condition is guaranteed.

  • Serial Peripheral Interface : SPI (Serial Peripheral Interfaces)

Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)

  • Operating frequency : 50 MHz (Max)
  • High read/write cycles: 10 trillion times / byte
  • Data retention: 40 years (+85 ℃) 10 years, (+105 ℃), 3.38 years (+125 ℃) or more

Under evaluation for more than 3.38years(+125 ℃)

  • Operating power supply voltage : 1.8 V to 3.6 V
  • Low power consumption : Operating power supply current 4 mA (Max@50 MHz)

Standby current 220 uA (Max)

Deep Power Down current 30 uA (Max)

  • Operation ambient temperature range : – 40 ℃ to +125 ℃
  • Package: 8-pin plastic SOP 150mil

8-pin plastic DFN 5mm x 6mm

AEC-Q100 Grade 1 compliance

■ MB85RS2MTYPNF-GS-AWERE2 Application
The FeRAM has a wide range of applicatiosn, such as industrial controllers, industrial instruments, ADAS, Drones, Meters, Robots, Automotives, BMS, TMPS, E-tags, Monitoring, E-tags, Tracking, Servo Motors, Power monitoring, Circuit Breakers, Chiller, numercial control machine, T-box, EV chargers, medical equipment, unltrasonic intruments, diagnostic devices, charing pile, E-mobility,  and so on.

The SPI Models for FeRAM for Automotives

Fujitsu FeRAM Serial SPI for Automotives includes, MB85RS4MTY, MB85RS4MLY, MB85RS2MTY, MB85RS2MLY, MB85RS1MTY, MB85RS1MLY, MB85RS512TY, MB85RS256TY, MB85RS128TY, MB85RS64VY. Pleaes kindly go to turn to the relateive link for the details.


Fujitsu FERAM for automotives
Fujitsu FERAM for automotives



Additional information


2M Bit



Power Supply Voltage

1.8 to 3.6V

Operating Freq. (max)


Read/Write Cycle

1013(10 trillion) times

Operating Temp.

-40 to +125℃




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