MB85RS4MTPF-G-BCERE1 Overview
Memory FeRAM 4M (512 K x 8) Bit SPI MB85RS4MTPF-G-BCERE1
■ DESCRIPTION
MB85RS4MTPF-G-BCERE1 is a FeRAM (Ferroelectric RAM) chip with a configuration of 524,288 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies to form the non-volatile memory cells.
MB85RS4MT takess the Serial Peripheral Interface (SPI).
Different from SRAM, the MB85RS4MT can keep and store data without using a back-up battery, which is battery-free or passive. This feature is most important for the hospital application.
The memory cells used in the MB85RS4MT can be used for 10 trillion read/write operations, which is a great improvement over the number of read and write operations provided by Flash memory and EEPROM.
MB85RS4MT does not take long time to write data like Flash memories or EEPROM, and MB85RS4MT takes no wait time.
■ FEATURES
- Bit configuration : 524,288 words x 8 bits
- Serial Peripheral Interface : SPI (Serial Peripheral Interface)
Correspondent to SPI mode 0 (0, 0) and mode 3 (1, 1)
- Operating frequency :40MHz (Max)
- High read/write cycles: 10 trillion times / byte
- Data maintenance period : 10 years (+85 ℃),95 years(+55 ℃), over 200 years(+35 ℃)
- Operating power supply voltage : 1.8 V to 3.6 V
- Low power consumption : Operating power supply current 2.6mA (Max@40 MHz)
Standby current 50 uA (Max)
Sleep current 8uA (Max)
- Operation ambient temperature range : -40 ℃ to +85 ℃
- Package : 8-pin plastic SOP (208mil)
- Radiation hardness
RoHS compliance
MB85RS4MTPF-G-BCERE1 Application
The FeRAM has a wide range of applications, such as industrial controllers, industrial instruments, ADAS, Drones, Meters, Robots, Automotives, BMS, TPMS, E-tags, Monitoring, E-tags, Asset Tracking, Servo Motors, Power monitoring, Circuit Breakers, Chiller, numercial control machine, T-box, EV chargers, medical equipment, unltrasonic intruments, diagnostic devices, charing pile, E-mobility, and so on.
MB85RS4MTPF-G-BCERE1 FeRAM
Reviews
There are no reviews yet.